By B. Jayant Baliga

ISBN-10: 0387755888

ISBN-13: 9780387755885

ISBN-10: 0387755896

ISBN-13: 9780387755892

Advanced strength Rectifier strategies offers an in-depth remedy of the physics of operation of complex energy rectifiers. Analytical types for explaining the operation of the entire complex energy rectifier units are constructed. result of numerical simulations are supplied for added perception into gadget physics and for validation of varied analytical models.

Drawing upon years of useful event and utilizing various examples and illustrative designs, B. Jayant Baliga discusses:

Analytical formulations for layout and research of buildings comparable to the Junction Barrier managed Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier

Numerical simulations to provide an explanation for the working physics and validate the models

The position of silicon carbide within the structural layout and improvement of strength rectifiers

Advanced strength Rectifier innovations can be of curiosity to training engineers within the energy semiconductor neighborhood and will additionally function a reference for graduate scholars and college doing study in an instructional atmosphere. chosen sections of the ebook can be utilized as supplementary instructing fabric for classes taught utilizing the textbook 'Fundamentals of strength Semiconductor units' by way of the author.

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Example text

2E On-State Characteristics for a 50V Silicon JBS Rectifier. 2 Fig. 3E On-State Current Distribution in a 50V Silicon JBS Rectifier. The current flow-lines for the above JBS rectifier structure, shown in Fig. 5 volts, can be used to confirm that it operates in a unipolar current conduction mode. It can be seen that all the current flow-lines converge to the Schottky contact located on the upper right-hand-side of + the structure demonstrating that no current flows via the P region. The current flow pattern is consistent with Model C with an approximately uniform crosssection until the bottom of the depletion region followed by a spreading of the current at an angle of about 45 degrees.

The leakage current density for a silicon Schottky rectifier with drift region doping concentration of 1 x 1016 cm-3 is shown in Fig. 8 after including the influence of the pre-breakdown multiplication coefficient. The effect of including the multiplication coefficient is apparent at high voltages when the electric field approaches the critical electric field for breakdown. The leakage currents obtained, after including the effects of Schottky barrier lowering and pre-breakdown multiplication, are consistent with the characteristics of commercially available silicon devices, which exhibit an order of magnitude increase in leakage current from low reverse bias voltages to the rated voltage (about 80 percent of the breakdown voltage).

18] The resistance of the second segment can be derived by using the same approach used for Model A. 19] because of the 45 degree spreading angle. Z): Rsp ,drift = ρ D . (x J + WD ,ON ) d ⎛ p⎞ + ρ D . p. 45 volts from the built-in potential of the P-N junction. In addition, it is important to recognize that the doping profile at the junction is linearly graded leading to half the depletion occurring on the P-side of the junction. 5. 24] Junction Barrier Controlled Schottky Rectifiers 39 where Vbi is the built-in potential of the abrupt P+/N junction.

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